Press release

Magnachip Boosts Its Extensive Automotive Product Lineup With the Release of a New 40V MXT MV MOSFET

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Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced today the release of its new 40V MXT MV MOSFET1. With this latest addition, the Company now offers 13 MOSFET and IGBT products for a wide range of automotive applications (see the tables below).

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(Graphic: Business Wire)

(Graphic: Business Wire)

As the automotive industry adopts advanced technologies such as autonomous driving and enhanced infotainment systems, the demand for high-efficiency power solutions increases. According to Omdia, a global market research firm, the automotive power discrete market is projected to grow 14% annually from 2024 to 2027.

Magnachip entered the automotive sector in April 2022 with its first 40V MOSFET and has since broadened its product offerings by releasing 30V, -40V (P-channel MOSFET2), 60V, and 250V MOSFETs for vehicles. In September 2023, the Company introduced 650V and 1200V IGBTs for positive temperature coefficient heaters and e-compressors for automotive. In the last two years, Magnachip’s power products have been integrated into vehicles of major automotive manufacturers in the United States, Korea, Japan and China.

Leveraging its technological capabilities, Magnachip now unveils this 40V MXT MV MOSFET (AMDD040N055RH) in the Decawatt Package (DPAK). The new MOSFET offers exceptional versatility for various automotive applications, such as motor control systems or power seat modules and electric stability control systems for reverse battery protection.

“Magnachip is committed to supplying premium products that meet the evolving demands of the automotive sector,” said YJ Kim, CEO of Magnachip. “Our technical innovation, coupled with a steady supply and a comprehensive range of product offerings, will strengthen our foothold in the automotive industry and broaden our global market presence.”

Magnachip’s automotive MOSFET product family

Product

VDS [V]

VGS(th), typ.

[V]

*RDS(ON) [mΩ]

@ VGS=10V

Qg, Typ [nC]

@ 10V

Package

AEC-Q101

Max.

Typ.

AMDV030N150URH

30

1.9

15.0

11.0

8.3

PDFN33

Qualified

AMDU040N014VRH

40

3.1

1.4

1.1

71.0

PDFN56

Qualified

AMDW040N014VF

40

3.1

1.4

1.1

71.0

Sawn on Foil

Qualified

AMDW1723F

40

3.0

2.0

1.6

88.3

Sawn on Foil

Qualified

AMDU040N043VRH

40

3.2

4.3

3.5

23.0

PDFN56

Qualified

AMDD040N055RH

40

3.2

5.5

4.3

24.0

DPAK

Qualified

AMDUA040N070RH

40

3.2

7.0

6.1

24.0

PDFN56 Dual

Qualified

AMDD040P069RH

-40

-1.8

6.9

6.2

91.0

DPAK

Qualified

AMDW06N021F

60

2.3

2.8

2.1

243.0

Sawn on Foil

Qualified

AMDD14N25CRH

250

3.0

280.0

220.0

20.0

DPAK

Qualified

*RDS(on)_max: the maximum resistance of MOSFETs during on-state operation

Magnachip’s automotive IGBT product family

Product

VCES

IC

IC, max.

Package

Option

AEC-Q101

AMBQ40T65PHRTH

650V

40A

60A

TO247

Diode co-pak

Qualified

AMBQ40T120RFRTH

1200V

40A

60A

TO247

Diode co-pak

Qualified

AMBQ40T120RRTH

1200V

40A

60A

TO247

None (Diode)

Qualified

Related Links

Please find further details and datasheet about Magnachip’s Automotive Solutions at https://www.magnachip.com/automotive-solutions.

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About Magnachip Semiconductor

Magnachip is a designer and manufacturer of analog and mixed-signal semiconductor platform solutions for communication, Internet of Things (“IoT”), consumer, computing, industrial and automotive applications. The Company provides a broad range of standard products to customers worldwide. Magnachip, with more than 40 years of operating history, owns a portfolio of approximately 1,100 registered patents and pending applications, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through Magnachip’s website is not a part of, and is not incorporated into, this release.

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1 MXT MV MOSFET (Magnachip eXtreme Trench Medium Voltage MOSFET): Magnachip’s cutting-edge product portfolio of 40~200V trench MOSFETs

2 P-channel MOSFET: A P-channel MOSFET requires the gate voltage to be lower than the source to turn on, in contrast to an N-channel MOSFET. Therefore, the drain-source voltage is generally expressed as a negative value (ex. -40V).